SIUD401ED-T1-GE3
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
1.4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
PowerPAK® 0806
Gate Charge (Qg) (Max) @ Vgs:
2 NC @ 10 V
Rds On (Max) @ Id, Vgs:
1.573Ohm @ 200mA, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
30 V
Vgs (Max):
±12V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
33 PF @ 15 V
Mounting Type:
Surface Mount
Series:
TrenchFET® Gen III
Supplier Device Package:
PowerPAK® 0806
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
500mA (Ta)
Power Dissipation (Max):
1.25W (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SIUD401
Model Number:
SIUD401ED-T1-GE3
Introduction
P-Channel 30 V 500mA (Ta) 1.25W (Ta) Surface Mount PowerPAK® 0806
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