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SSM6J213FE(TE85L,F
manufacturer:
Toshiba Semiconductor and Storage
Description:
MOSFET P CH 20V 2.6A ES6
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
1V @ 1mA
Operating Temperature:
150°C (TJ)
Package / Case:
SOT-563, SOT-666
Gate Charge (Qg) (Max) @ Vgs:
4.7 NC @ 4.5 V
Rds On (Max) @ Id, Vgs:
103mOhm @ 1.5A, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4.5V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
20 V
Vgs (Max):
±8V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
290 PF @ 10 V
Mounting Type:
Surface Mount
Series:
U-MOSVI
Supplier Device Package:
ES6
Mfr:
Toshiba Semiconductor And Storage
Current - Continuous Drain (Id) @ 25°C:
2.6A (Ta)
Power Dissipation (Max):
500mW (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SSM6J213
Model Number:
SSM6J213FE(TE85L,F
Introduction
P-Channel 20 V 2.6A (Ta) 500mW (Ta) Surface Mount ES6
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