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SIB422EDK-T1-GE3
manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 20V 9A PPAK SC75-6
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
18 NC @ 8 V
FET Feature:
-
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Series:
TrenchFET®
Vgs (Max):
±8V
Vgs(th) (Max) @ Id:
1V @ 250µA
Supplier Device Package:
PowerPAK® SC-75-6
Rds On (Max) @ Id, Vgs:
30mOhm @ 5A, 4.5V
Mfr:
Vishay Siliconix
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4.5V
Power Dissipation (Max):
2.5W (Ta), 13W (Tc)
Package / Case:
PowerPAK® SC-75-6
Drain To Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
9A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SIB422
Model Number:
SIB422EDK-T1-GE3
Introduction
N-Channel 20 V 9A (Tc) 2.5W (Ta), 13W (Tc) Surface Mount PowerPAK® SC-75-6
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