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CSD19538Q2
manufacturer:
Texas Instruments
Description:
MOSFET N-CH 100V 14.4A 6WSON
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3.8V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-WDFN Exposed Pad
Gate Charge (Qg) (Max) @ Vgs:
5.6 NC @ 10 V
Rds On (Max) @ Id, Vgs:
59mOhm @ 5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
454 PF @ 50 V
Mounting Type:
Surface Mount
Series:
NexFET™
Supplier Device Package:
6-WSON (2x2)
Mfr:
Texas Instruments
Current - Continuous Drain (Id) @ 25°C:
14.4A (Ta)
Power Dissipation (Max):
2.5W (Ta), 20.2W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
CSD19538
Model Number:
CSD19538Q2
Introduction
N-Channel 100 V 14.4A (Ta) 2.5W (Ta), 20.2W (Tc) Surface Mount 6-WSON (2x2)
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