SI8424CDB-T1-E1
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
800mV @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
4-UFBGA, WLCSP
Gate Charge (Qg) (Max) @ Vgs:
40 NC @ 4.5 V
Rds On (Max) @ Id, Vgs:
20mOhm @ 2A, 4.5V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.2V, 4.5V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
8 V
Vgs (Max):
±5V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
2340 PF @ 4 V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
4-Microfoot
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
6.3A (Ta)
Power Dissipation (Max):
1.1W (Ta), 2.7W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SI8424
Model Number:
SI8424CDB-T1-E1
Introduction
N-Channel 8 V 6.3A (Ta) 1.1W (Ta), 2.7W (Tc) Surface Mount 4-Microfoot
Send RFQ
Stock:
MOQ:

