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SI8410DB-T2-E1
manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 20V 4MICRO FOOT
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
850mV @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
4-UFBGA
Gate Charge (Qg) (Max) @ Vgs:
16 NC @ 8 V
Rds On (Max) @ Id, Vgs:
37mOhm @ 1.5A, 4.5V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4.5V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
20 V
Vgs (Max):
±8V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
620 PF @ 10 V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
4-Micro Foot (1x1)
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
3.8A (Ta)
Power Dissipation (Max):
780mW (Ta), 1.8W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SI8410
Model Number:
SI8410DB-T2-E1
Introduction
N-Channel 20 V 3.8A (Ta) 780mW (Ta), 1.8W (Tc) Surface Mount 4-Micro Foot (1x1)
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