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SI3430DV-T1-GE3
manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 100V 1.8A 6TSOP
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
6.6 NC @ 10 V
FET Feature:
-
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Series:
-
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
2V @ 250µA (Min)
Supplier Device Package:
6-TSOP
Rds On (Max) @ Id, Vgs:
170mOhm @ 2.4A, 10V
Mfr:
Vishay Siliconix
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Power Dissipation (Max):
1.14W (Ta)
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Drain To Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
1.8A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SI3430
Model Number:
SI3430DV-T1-GE3
Introduction
N-Channel 100 V 1.8A (Ta) 1.14W (Ta) Surface Mount 6-TSOP
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