NVTFWS9D6P04M8LTAG
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.4V @ 580µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerWDFN
Gate Charge (Qg) (Max) @ Vgs:
34.6 NC @ 10 V
Rds On (Max) @ Id, Vgs:
9.5mOhm @ 20A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
2312 PF @ 20 V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101
Supplier Device Package:
8-WDFN (3.3x3.3)
Mfr:
Onsemi
Current - Continuous Drain (Id) @ 25°C:
13A (Ta), 64A (Tc)
Power Dissipation (Max):
3.2W (Ta), 75W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NVTFWS9
Model Number:
NVTFWS9D6P04M8LTAG
Introduction
P-Channel 40 V 13A (Ta), 64A (Tc) 3.2W (Ta), 75W (Tc) Surface Mount 8-WDFN (3.3x3.3)
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