RD3G500GNTL
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs:
31 NC @ 10 V
Rds On (Max) @ Id, Vgs:
4.9mOhm @ 50A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
22800 PF @ 20 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
TO-252
Mfr:
Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C:
50A (Tc)
Power Dissipation (Max):
35W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
RD3G500
Model Number:
RD3G500GNTL
Introduction
N-Channel 40 V 50A (Tc) 35W (Tc) Surface Mount TO-252
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