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SIR608DP-T1-RE3
manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 45V 51A/208A PPAK
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs:
167 NC @ 10 V
Rds On (Max) @ Id, Vgs:
1.2mOhm @ 20A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
45 V
Vgs (Max):
+20V, -16V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
8900 PF @ 20 V
Mounting Type:
Surface Mount
Series:
TrenchFET® Gen IV
Supplier Device Package:
PowerPAK® SO-8
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
51A (Ta), 208A (Tc)
Power Dissipation (Max):
6.25W (Ta), 104W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SIR608
Model Number:
SIR608DP-T1-RE3
Introduction
N-Channel 45 V 51A (Ta), 208A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
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