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SIHJ6N65E-T1-GE3
manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 650V 5.6A PPAK SO-8
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs:
32 NC @ 10 V
Rds On (Max) @ Id, Vgs:
868mOhm @ 3A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
650 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
596 PF @ 100 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
PowerPAK® SO-8
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
5.6A (Tc)
Power Dissipation (Max):
74W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SIHJ6
Model Number:
SIHJ6N65E-T1-GE3
Introduction
N-Channel 650 V 5.6A (Tc) 74W (Tc) Surface Mount PowerPAK® SO-8
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