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NVMYS3D3N06CLTWG
manufacturer:
onsemi
Description:
MOSFET N-CH 60V 26A/133A 4LFPAK
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
SOT-1023, 4-LFPAK
Gate Charge (Qg) (Max) @ Vgs:
40.7 NC @ 10 V
Rds On (Max) @ Id, Vgs:
3mOhm @ 50A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
2880 PF @ 25 V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101
Supplier Device Package:
LFPAK4 (5x6)
Mfr:
Onsemi
Current - Continuous Drain (Id) @ 25°C:
26A (Ta), 133A (Tc)
Power Dissipation (Max):
3.9W (Ta), 100W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NVMYS3
Model Number:
NVMYS3D3N06CLTWG
Introduction
N-Channel 60 V 26A (Ta), 133A (Tc) 3.9W (Ta), 100W (Tc) Surface Mount LFPAK4 (5x6)
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