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IRF830BPBF-BE3
manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 500V 5.3A TO220AB
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Type:
N-Channel
FET Feature:
-
Product Status:
Active
Mounting Type:
Through Hole
Package:
Tube
Vgs(th) (Max) @ Id:
5V @ 250µA
Series:
-
Vgs (Max):
±30V
Gate Charge (Qg) (Max) @ Vgs:
20 NC @ 10 V
Supplier Device Package:
TO-220AB
Rds On (Max) @ Id, Vgs:
1.5Ohm @ 2.5A, 10V
Mfr:
Vishay Siliconix
Operating Temperature:
-55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds:
325 PF @ 100 V
Drain To Source Voltage (Vdss):
500 V
Power Dissipation (Max):
104W (Tc)
Package / Case:
TO-220-3
Current - Continuous Drain (Id) @ 25°C:
5.3A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IRF830
Model Number:
IRF830BPBF-BE3
Introduction
N-Channel 500 V 5.3A (Tc) 104W (Tc) Through Hole TO-220AB
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