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TK58A06N1,S4X
manufacturer:
Toshiba Semiconductor and Storage
Description:
MOSFET N-CH 60V 58A TO220SIS
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 500µA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Gate Charge (Qg) (Max) @ Vgs:
46 NC @ 10 V
Rds On (Max) @ Id, Vgs:
5.4mOhm @ 29A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
3400 PF @ 30 V
Mounting Type:
Through Hole
Series:
U-MOSVIII-H
Supplier Device Package:
TO-220SIS
Mfr:
Toshiba Semiconductor And Storage
Current - Continuous Drain (Id) @ 25°C:
58A (Tc)
Power Dissipation (Max):
35W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TK58A06
Model Number:
TK58A06N1,S4X
Introduction
N-Channel 60 V 58A (Tc) 35W (Tc) Through Hole TO-220SIS
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