IRF60DM206
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3.7V @ 150µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
DirectFET™ Isometric ME
Gate Charge (Qg) (Max) @ Vgs:
200 NC @ 10 V
Rds On (Max) @ Id, Vgs:
2.9mOhm @ 80A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Product Status:
Not For New Designs
Input Capacitance (Ciss) (Max) @ Vds:
6530 PF @ 25 V
Mounting Type:
Surface Mount
Series:
StrongIRFET™
Supplier Device Package:
DirectFET™ Isometric ME
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
130A (Tc)
Power Dissipation (Max):
96W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IRF60DM206
Model Number:
IRF60DM206
Introduction
N-Channel 60 V 130A (Tc) 96W (Tc) Surface Mount DirectFET™ Isometric ME
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