STB155N3LH6
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:
80 NC @ 5 V
Rds On (Max) @ Id, Vgs:
3mOhm @ 40A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
3800 PF @ 25 V
Mounting Type:
Surface Mount
Series:
DeepGATE™, STripFET™ VI
Supplier Device Package:
D²PAK (TO-263)
Mfr:
STMicroelectronics
Current - Continuous Drain (Id) @ 25°C:
80A (Tc)
Power Dissipation (Max):
110W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STB155
Model Number:
STB155N3LH6
Introduction
N-Channel 30 V 80A (Tc) 110W (Tc) Surface Mount D²PAK (TO-263)
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