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IPD80R360P7ATMA1
manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 800V 13A TO252-3
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3.5V @ 280µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs:
30 NC @ 10 V
Rds On (Max) @ Id, Vgs:
360mOhm @ 5.6A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
800 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
930 PF @ 500 V
Mounting Type:
Surface Mount
Series:
CoolMOS™ P7
Supplier Device Package:
PG-TO252-3
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
13A (Tc)
Power Dissipation (Max):
84W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IPD80R
Model Number:
IPD80R360P7ATMA1
Introduction
N-Channel 800 V 13A (Tc) 84W (Tc) Surface Mount PG-TO252-3
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