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IRF630PBF-BE3
manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 200V 9A TO220AB
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Type:
N-Channel
FET Feature:
-
Product Status:
Active
Mounting Type:
Through Hole
Package:
Tube
Vgs(th) (Max) @ Id:
4V @ 250µA
Series:
-
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
43 NC @ 10 V
Supplier Device Package:
TO-220AB
Rds On (Max) @ Id, Vgs:
400mOhm @ 5.4A, 10V
Mfr:
Vishay Siliconix
Operating Temperature:
-55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds:
800 PF @ 25 V
Drain To Source Voltage (Vdss):
200 V
Power Dissipation (Max):
74W (Tc)
Package / Case:
TO-220-3
Current - Continuous Drain (Id) @ 25°C:
9A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IRF630
Model Number:
IRF630PBF-BE3
Introduction
N-Channel 200 V 9A (Tc) 74W (Tc) Through Hole TO-220AB
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