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IPA80R1K0CEXKSA2
manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 800V 5.7A TO220-FP
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3.9V @ 250µA
Operating Temperature:
-40°C ~ 150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Gate Charge (Qg) (Max) @ Vgs:
31 NC @ 10 V
Rds On (Max) @ Id, Vgs:
950mOhm @ 3.6A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
800 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
785 PF @ 100 V
Mounting Type:
Through Hole
Series:
CoolMOS™ CE
Supplier Device Package:
PG-TO220-FP
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
5.7A (Tc)
Power Dissipation (Max):
32W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IPA80R1
Model Number:
IPA80R1K0CEXKSA2
Introduction
N-Channel 800 V 5.7A (Tc) 32W (Tc) Through Hole PG-TO220-FP
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