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IPT029N08N5ATMA1
manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 80V 52A/169A HSOF-8
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3.8V @ 108µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerSFN
Gate Charge (Qg) (Max) @ Vgs:
87 NC @ 10 V
Rds On (Max) @ Id, Vgs:
2.9mOhm @ 150A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
80 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
6500 PF @ 40 V
Mounting Type:
Surface Mount
Series:
OptiMOS™ 5
Supplier Device Package:
PG-HSOF-8-1
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
52A (Ta), 169A (Tc)
Power Dissipation (Max):
168W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IPT029
Model Number:
IPT029N08N5ATMA1
Introduction
N-Channel 80 V 52A (Ta), 169A (Tc) 168W (Tc) Surface Mount PG-HSOF-8-1
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