STP5NK80Z
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4.5V @ 100µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
45.5 NC @ 10 V
Rds On (Max) @ Id, Vgs:
2.4Ohm @ 2.15A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
800 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
910 PF @ 25 V
Mounting Type:
Through Hole
Series:
PowerMESH™
Supplier Device Package:
TO-220
Mfr:
STMicroelectronics
Current - Continuous Drain (Id) @ 25°C:
4.3A (Tc)
Power Dissipation (Max):
110W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STP5NK80
Model Number:
STP5NK80Z
Introduction
N-Channel 800 V 4.3A (Tc) 110W (Tc) Through Hole TO-220
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