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IPT60R125G7XTMA1
manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 600V 20A 8HSOF
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 320µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerSFN
Gate Charge (Qg) (Max) @ Vgs:
27 NC @ 10 V
Rds On (Max) @ Id, Vgs:
125mOhm @ 6.4A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
600 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1080 PF @ 400 V
Mounting Type:
Surface Mount
Series:
CoolMOS™ G7
Supplier Device Package:
PG-HSOF-8-2
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
20A (Tc)
Power Dissipation (Max):
120W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IPT60R125
Model Number:
IPT60R125G7XTMA1
Introduction
N-Channel 600 V 20A (Tc) 120W (Tc) Surface Mount PG-HSOF-8-2
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