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STP9NM60N
manufacturer:
STMicroelectronics
Description:
MOSFET N-CH 600V 6.5A TO220AB
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
17.4 NC @ 10 V
Rds On (Max) @ Id, Vgs:
745mOhm @ 3.25A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
600 V
Vgs (Max):
±25V
Product Status:
Not For New Designs
Input Capacitance (Ciss) (Max) @ Vds:
452 PF @ 50 V
Mounting Type:
Through Hole
Series:
MDmesh™ II
Supplier Device Package:
TO-220
Mfr:
STMicroelectronics
Current - Continuous Drain (Id) @ 25°C:
6.5A (Tc)
Power Dissipation (Max):
70W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STP9NM60
Model Number:
STP9NM60N
Introduction
N-Channel 600 V 6.5A (Tc) 70W (Tc) Through Hole TO-220
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