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IRFBF30PBF-BE3
manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 900V 3.6A TO220AB
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Type:
N-Channel
FET Feature:
-
Product Status:
Active
Mounting Type:
Through Hole
Package:
Tube
Vgs(th) (Max) @ Id:
4V @ 250µA
Series:
-
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
78 NC @ 10 V
Supplier Device Package:
TO-220AB
Rds On (Max) @ Id, Vgs:
3.7Ohm @ 2.2A, 10V
Mfr:
Vishay Siliconix
Operating Temperature:
-55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds:
1200 PF @ 25 V
Drain To Source Voltage (Vdss):
900 V
Power Dissipation (Max):
125W (Tc)
Package / Case:
TO-220-3
Current - Continuous Drain (Id) @ 25°C:
3.6A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IRFBF30
Model Number:
IRFBF30PBF-BE3
Introduction
N-Channel 900 V 3.6A (Tc) 125W (Tc) Through Hole TO-220AB
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