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IXTP1R6N50D2
manufacturer:
IXYS
Description:
MOSFET N-CH 500V 1.6A TO220AB
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
Depletion Mode
Vgs(th) (Max) @ Id:
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
23.7 NC @ 5 V
Rds On (Max) @ Id, Vgs:
2.3Ohm @ 800mA, 0V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
-
Package:
Tube
Drain To Source Voltage (Vdss):
500 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
645 PF @ 25 V
Mounting Type:
Through Hole
Series:
Depletion
Supplier Device Package:
TO-220-3
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
1.6A (Tc)
Power Dissipation (Max):
100W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXTP1
Model Number:
IXTP1R6N50D2
Introduction
N-Channel 500 V 1.6A (Tc) 100W (Tc) Through Hole TO-220-3
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