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TK12E80W,S1X
manufacturer:
Toshiba Semiconductor and Storage
Description:
MOSFET N-CH 800V 11.5A TO220
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 570µA
Operating Temperature:
150°C
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
23 NC @ 10 V
Rds On (Max) @ Id, Vgs:
450mOhm @ 5.8A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
800 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1400 PF @ 300 V
Mounting Type:
Through Hole
Series:
DTMOSIV
Supplier Device Package:
TO-220
Mfr:
Toshiba Semiconductor And Storage
Current - Continuous Drain (Id) @ 25°C:
11.5A (Ta)
Power Dissipation (Max):
165W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TK12E80
Model Number:
TK12E80W,S1X
Introduction
N-Channel 800 V 11.5A (Ta) 165W (Tc) Through Hole TO-220
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