english
SUM90100E-GE3
manufacturer:
Vishay Siliconix
Description:
N-CHANNEL 200-V (D-S) MOSFET D2P
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
110 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Bulk
Input Capacitance (Ciss) (Max) @ Vds:
3930 PF @ 100 V
Series:
TrenchFET®
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
4V @ 250µA
Supplier Device Package:
TO-263 (D²Pak)
Rds On (Max) @ Id, Vgs:
11.4mOhm @ 16A, 10V
Mfr:
Vishay Siliconix
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
7.5V, 10V
Power Dissipation (Max):
375W (Tc)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Drain To Source Voltage (Vdss):
200 V
Current - Continuous Drain (Id) @ 25°C:
150A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
SUM90100E-GE3
Introduction
N-Channel 200 V 150A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak)
Send RFQ
Stock:
MOQ: