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IPP65R190CFD7AAKSA1
manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 650V 14A TO220-3
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Type:
N-Channel
FET Feature:
-
Product Status:
Active
Mounting Type:
Through Hole
Package:
Tube
Vgs(th) (Max) @ Id:
4.5V @ 320µA
Series:
Automotive, AEC-Q101, CoolMOS™
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
28 NC @ 10 V
Supplier Device Package:
PG-TO220-3
Rds On (Max) @ Id, Vgs:
190mOhm @ 6.4A, 10V
Mfr:
Infineon Technologies
Operating Temperature:
-40°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds:
1291 PF @ 400 V
Drain To Source Voltage (Vdss):
650 V
Power Dissipation (Max):
77W (Tc)
Package / Case:
TO-220-3
Current - Continuous Drain (Id) @ 25°C:
14A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IPP65R190
Model Number:
IPP65R190CFD7AAKSA1
Introduction
N-Channel 650 V 14A (Tc) 77W (Tc) Through Hole PG-TO220-3
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