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SIHW21N80AE-GE3
manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 800V 17.4A TO247AD
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3
Gate Charge (Qg) (Max) @ Vgs:
72 NC @ 10 V
Rds On (Max) @ Id, Vgs:
235mOhm @ 11A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
800 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1388 PF @ 100 V
Mounting Type:
Through Hole
Series:
E
Supplier Device Package:
TO-247AD
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
17.4A (Tc)
Power Dissipation (Max):
32W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SIHW21
Model Number:
SIHW21N80AE-GE3
Introduction
N-Channel 800 V 17.4A (Tc) 32W (Tc) Through Hole TO-247AD
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