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SIHH20N50E-T1-GE3
manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 500V 22A PPAK 8 X 8
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs:
84 NC @ 10 V
Rds On (Max) @ Id, Vgs:
147mOhm @ 10A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
500 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
2063 PF @ 100 V
Mounting Type:
Surface Mount
Series:
E
Supplier Device Package:
PowerPAK® 8 X 8
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
22A (Tc)
Power Dissipation (Max):
174W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SIHH20
Model Number:
SIHH20N50E-T1-GE3
Introduction
N-Channel 500 V 22A (Tc) 174W (Tc) Surface Mount PowerPAK® 8 x 8
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