english
SUM60061EL-GE3
manufacturer:
Vishay Siliconix
Description:
P-CHANNEL 80 V (D-S) MOSFET D2PA
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
218 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Bulk
Input Capacitance (Ciss) (Max) @ Vds:
9600 PF @ 40 V
Series:
TrenchFET®
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Supplier Device Package:
TO-263 (D²Pak)
Rds On (Max) @ Id, Vgs:
6.1mOhm @ 20A, 10V
Mfr:
Vishay Siliconix
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Power Dissipation (Max):
375W (Tc)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Drain To Source Voltage (Vdss):
80 V
Current - Continuous Drain (Id) @ 25°C:
150A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
SUM60061EL-GE3
Introduction
P-Channel 80 V 150A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak)
Send RFQ
Stock:
MOQ: