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SIHP30N60E-GE3
manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 600V 29A TO220AB
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
130 NC @ 10 V
FET Feature:
-
Product Status:
Active
Mounting Type:
Through Hole
Package:
Tube
Input Capacitance (Ciss) (Max) @ Vds:
2600 PF @ 100 V
Series:
E
Vgs (Max):
±30V
Vgs(th) (Max) @ Id:
4V @ 250µA
Mfr:
Vishay Siliconix
Rds On (Max) @ Id, Vgs:
125mOhm @ 15A, 10V
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
250W (Tc)
Package / Case:
TO-220-3
Drain To Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
29A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SIHP30
Model Number:
SIHP30N60E-GE3
Introduction
N-Channel 600 V 29A (Tc) 250W (Tc) Through Hole
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