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IPBE65R075CFD7AATMA1
manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 650V 32A TO263-7
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4.5V @ 820µA
Operating Temperature:
-40°C ~ 150°C (TJ)
Package / Case:
TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
Gate Charge (Qg) (Max) @ Vgs:
68 NC @ 10 V
Rds On (Max) @ Id, Vgs:
75mOhm @ 16.4A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
650 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
3288 PF @ 400 V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101, CoolMOS™ CFD7A
Supplier Device Package:
PG-TO263-7-3-10
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
32A (Tc)
Power Dissipation (Max):
171W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IPBE65
Model Number:
IPBE65R075CFD7AATMA1
Introduction
N-Channel 650 V 32A (Tc) 171W (Tc) Surface Mount PG-TO263-7-3-10
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