logo
Send Message
Home > Products > > STW50N65DM6

STW50N65DM6

manufacturer:
STMicroelectronics
Description:
MOSFET N-CH 650V 33A TO247-3
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4.75V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3
Gate Charge (Qg) (Max) @ Vgs:
52.5 NC @ 10 V
Rds On (Max) @ Id, Vgs:
91mOhm @ 16.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
650 V
Vgs (Max):
±25V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
52500 PF @ 100 V
Mounting Type:
Through Hole
Series:
MDmesh™ DM6
Supplier Device Package:
TO-247 Long Leads
Mfr:
STMicroelectronics
Current - Continuous Drain (Id) @ 25°C:
33A (Tc)
Power Dissipation (Max):
250W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STW50
Model Number:
STW50N65DM6
Introduction
N-Channel 650 V 33A (Tc) 250W (Tc) Through Hole TO-247 Long Leads
Send RFQ
Stock:
MOQ: