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IXTH6N120
manufacturer:
IXYS
Description:
MOSFET N-CH 1200V 6A TO247
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3
Gate Charge (Qg) (Max) @ Vgs:
56 NC @ 10 V
Rds On (Max) @ Id, Vgs:
2.6Ohm @ 3A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Box
Drain To Source Voltage (Vdss):
1200 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1950 PF @ 25 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-247 (IXTH)
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
6A (Tc)
Power Dissipation (Max):
300W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXTH6
Model Number:
IXTH6N120
Introduction
N-Channel 1200 V 6A (Tc) 300W (Tc) Through Hole TO-247 (IXTH)
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