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SCT4062KEHRC11
manufacturer:
Rohm Semiconductor
Description:
1200V, 26A, 3-PIN THD, TRENCH-ST
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
64 NC @ 18 V
Product Status:
Active
Mounting Type:
Through Hole
Package:
Tube
Input Capacitance (Ciss) (Max) @ Vds:
1498 PF @ 800 V
Series:
Automotive, AEC-Q101
Vgs (Max):
+21V, -4V
Vgs(th) (Max) @ Id:
4.8V @ 6.45mA
Supplier Device Package:
TO-247N
Rds On (Max) @ Id, Vgs:
81mOhm @ 12A, 18V
Mfr:
Rohm Semiconductor
Operating Temperature:
175°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
18V
Power Dissipation (Max):
115W
Package / Case:
TO-247-3
Drain To Source Voltage (Vdss):
1200 V
Current - Continuous Drain (Id) @ 25°C:
26A (Tc)
Technology:
SiCFET (Silicon Carbide)
FET Feature:
-
Model Number:
SCT4062KEHRC11
Introduction
N-Channel 1200 V 26A (Tc) 115W Through Hole TO-247N
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