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SCTWA90N65G2V-4
manufacturer:
STMicroelectronics
Description:
TRANS SJT N-CH 650V 119A HIP247
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Type:
N-Channel
FET Feature:
-
Product Status:
Active
Mounting Type:
Through Hole
Package:
Tube
Vgs(th) (Max) @ Id:
5V @ 1mA
Series:
-
Vgs (Max):
+22V, -10V
Gate Charge (Qg) (Max) @ Vgs:
157 NC @ 18 V
Supplier Device Package:
HiP247™ Long Leads
Rds On (Max) @ Id, Vgs:
24mOhm @ 50A, 18V
Mfr:
STMicroelectronics
Operating Temperature:
-55°C ~ 200°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds:
3380 PF @ 400 V
Drain To Source Voltage (Vdss):
650 V
Power Dissipation (Max):
565W (Tc)
Package / Case:
TO-247-3
Current - Continuous Drain (Id) @ 25°C:
119A (Tc)
Technology:
SiCFET (Silicon Carbide)
Base Product Number:
SCTWA90
Model Number:
SCTWA90N65G2V-4
Introduction
N-Channel 650 V 119A (Tc) 565W (Tc) Through Hole HiP247™ Long Leads
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