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RMD1N25ES9
manufacturer:
Rectron USA
Description:
MOSFET N-CHANNEL 25V 1.1A SOT363
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Product Status:
Active
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1.1V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds:
30 PF @ 10 V
Series:
-
Vgs (Max):
±12V
Package:
Tape & Reel (TR)
Supplier Device Package:
SOT-363-6L
Rds On (Max) @ Id, Vgs:
600mOhm @ 500mA, 4.5V
Mfr:
Rectron USA
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Power Dissipation (Max):
800mW (Ta)
Package / Case:
6-TSSOP, SC-88, SOT-363
Drain To Source Voltage (Vdss):
25 V
Current - Continuous Drain (Id) @ 25°C:
1.1A (Ta)
Technology:
MOSFET (Metal Oxide)
Model Number:
RMD1N25ES9
Introduction
N-Channel 25 V 1.1A (Ta) 800mW (Ta) Surface Mount SOT-363-6L
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