BSD816SNH6327
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Type:
N-Channel
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Bulk
Vgs(th) (Max) @ Id:
950mV @ 3.7µA
Series:
-
Vgs (Max):
±8V
Gate Charge (Qg) (Max) @ Vgs:
0.6 NC @ 2.5 V
Supplier Device Package:
PG-SOT363-6
Rds On (Max) @ Id, Vgs:
160mOhm @ 1.4A, 2.5V
Mfr:
Infineon Technologies
Operating Temperature:
-55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds:
180 PF @ 10 V
Drain To Source Voltage (Vdss):
20 V
Power Dissipation (Max):
500mW (Ta)
Package / Case:
6-VSSOP, SC-88, SOT-363
Current - Continuous Drain (Id) @ 25°C:
1.4A (Ta)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
BSD816SNH6327
Introduction
N-Channel 20 V 1.4A (Ta) 500mW (Ta) Surface Mount PG-SOT363-6
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