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PJQ1902_R1_00001
manufacturer:
Panjit International Inc.
Description:
30V N-CHANNEL ENHANCEMENT MODE M
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
1.1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
3-UFDFN
Gate Charge (Qg) (Max) @ Vgs:
0.87 NC @ 4.5 V
Rds On (Max) @ Id, Vgs:
1.2Ohm @ 350mA, 4.5V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4.5V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
30 V
Vgs (Max):
±10V
Product Status:
Not For New Designs
Input Capacitance (Ciss) (Max) @ Vds:
34 PF @ 15 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
3-DFN (0.6x1)
Mfr:
Panjit International Inc.
Current - Continuous Drain (Id) @ 25°C:
500mA (Ta)
Power Dissipation (Max):
700mW (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
PJQ1902
Model Number:
PJQ1902_R1_00001
Introduction
N-Channel 30 V 500mA (Ta) 700mW (Ta) Surface Mount 3-DFN (0.6x1)
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