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SI2356DS-T1-BE3
manufacturer:
Vishay Siliconix
Description:
N-CHANNEL 40-V (D-S) MOSFET
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
13 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds:
370 PF @ 20 V
Series:
-
Vgs (Max):
±12V
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Supplier Device Package:
SOT-23-3 (TO-236)
Rds On (Max) @ Id, Vgs:
51mOhm @ 3.2A, 10V
Mfr:
Vishay Siliconix
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 10V
Power Dissipation (Max):
960mW (Ta), 1.7W (Tc)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Drain To Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
3.2A (Ta), 4.3A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
SI2356DS-T1-BE3
Introduction
N-Channel 40 V 3.2A (Ta), 4.3A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
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