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Home > Products > > PMPB10R3XNX

PMPB10R3XNX

manufacturer:
Nexperia USA Inc.
Description:
SMALL SIGNAL MOSFETS FOR PORTABL
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
900mV @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-UDFN Exposed Pad
Gate Charge (Qg) (Max) @ Vgs:
9.9 NC @ 4.5 V
Rds On (Max) @ Id, Vgs:
12.2mOhm @ 8.9A, 4.5V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Package:
Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain To Source Voltage (Vdss):
30 V
Vgs (Max):
±12V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
770 PF @ 15 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
DFN2020M-6
Mfr:
Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C:
8.9A (Ta)
Power Dissipation (Max):
1.5W (Ta), 19W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
PMPB10
Model Number:
PMPB10R3XNX
Introduction
N-Channel 30 V 8.9A (Ta) 1.5W (Ta), 19W (Tc) Surface Mount DFN2020M-6
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