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SSM3H137TU,LF
manufacturer:
Toshiba Semiconductor and Storage
Description:
MOSFET N-CH 34V 2A UFM
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
1.7V @ 1mA
Operating Temperature:
150°C
Package / Case:
3-SMD, Flat Leads
Gate Charge (Qg) (Max) @ Vgs:
3 NC @ 10 V
Rds On (Max) @ Id, Vgs:
240mOhm @ 1A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
34 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
119 PF @ 10 V
Mounting Type:
Surface Mount
Series:
U-MOSIV
Supplier Device Package:
UFM
Mfr:
Toshiba Semiconductor And Storage
Current - Continuous Drain (Id) @ 25°C:
2A (Ta)
Power Dissipation (Max):
800mW (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SSM3H137
Model Number:
SSM3H137TU,LF
Introduction
N-Channel 34 V 2A (Ta) 800mW (Ta) Surface Mount UFM
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