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SIS112LDN-T1-GE3
manufacturer:
Vishay Siliconix
Description:
N-CHANNEL 100 V (D-S) MOSFET POW
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
11.8 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds:
355 PF @ 50 V
Series:
TrenchFET®
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Supplier Device Package:
PowerPAK® 1212-8
Rds On (Max) @ Id, Vgs:
119mOhm @ 3.5A, 10V
Mfr:
Vishay Siliconix
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Power Dissipation (Max):
3.2W (Ta), 19.8W (Tc)
Package / Case:
PowerPAK® 1212-8
Drain To Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
3.5A (Ta), 8.8A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
SIS112LDN-T1-GE3
Introduction
N-Channel 100 V 3.5A (Ta), 8.8A (Tc) 3.2W (Ta), 19.8W (Tc) Surface Mount PowerPAK® 1212-8
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