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IAUC41N06S5N102ATMA1
manufacturer:
Infineon Technologies
Description:
MOSFET_)40V 60V) PG-TDSON-8
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
16.3 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds:
1112.1 PF @ 30 V
Series:
Automotive, AEC-Q101, OptiMOS™-5
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
3.4V @ 13µA
Supplier Device Package:
PG-TDSON-8-33
Rds On (Max) @ Id, Vgs:
10.2mOhm @ 20A, 10V
Mfr:
Infineon Technologies
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
7V, 10V
Power Dissipation (Max):
42W (Tc)
Package / Case:
8-PowerTDFN
Drain To Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
47A (Tj)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
IAUC41N06S5N102ATMA1
Introduction
N-Channel 60 V 47A (Tj) 42W (Tc) Surface Mount PG-TDSON-8-33
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