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RM18P100HDE
manufacturer:
Rectron USA
Description:
MOSFET P-CH 100V 18A TO263-2
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Product Status:
Active
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
3V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds:
1300 PF @ 25 V
Series:
-
Vgs (Max):
±20V
Package:
Tape & Reel (TR)
Supplier Device Package:
TO-263-2
Rds On (Max) @ Id, Vgs:
100mOhm @ 16A, 10V
Mfr:
Rectron USA
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
70W (Tc)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Drain To Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
18A (Tc)
Technology:
MOSFET (Metal Oxide)
Model Number:
RM18P100HDE
Introduction
P-Channel 100 V 18A (Tc) 70W (Tc) Surface Mount TO-263-2
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RM130N200T7 |
MOSFET N-CHANNEL 200V 132A TO247
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