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ISP20EP10LMXTSA1
manufacturer:
Infineon Technologies
Description:
SMALL SIGNAL MOSFETS PG-SOT223-4
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2V @ 78µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-261-4, TO-261AA
Gate Charge (Qg) (Max) @ Vgs:
3.5 NC @ 10 V
Rds On (Max) @ Id, Vgs:
2Ohm @ 600mA, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
170 PF @ 50 V
Mounting Type:
Surface Mount
Series:
OptiMOS™
Supplier Device Package:
PG-SOT223-4
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
650mA (Ta), 990mA (Tc)
Power Dissipation (Max):
1.8W (Ta), 4.2W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
ISP20E
Model Number:
ISP20EP10LMXTSA1
Introduction
P-Channel 100 V 650mA (Ta), 990mA (Tc) 1.8W (Ta), 4.2W (Tc) Surface Mount PG-SOT223-4
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