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SIA110DJ-T1-GE3
manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 100V 5.4A/12A PPAK
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
PowerPAK® SC-70-6
Gate Charge (Qg) (Max) @ Vgs:
13 NC @ 10 V
Rds On (Max) @ Id, Vgs:
55mOhm @ 4A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
7.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
550 PF @ 50 V
Mounting Type:
Surface Mount
Series:
TrenchFET® Gen IV
Supplier Device Package:
PowerPAK® SC-70-6
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
5.4A (Ta), 12A (Tc)
Power Dissipation (Max):
3.5W (Ta), 19W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SIA110
Model Number:
SIA110DJ-T1-GE3
Introduction
N-Channel 100 V 5.4A (Ta), 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6
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IRLL1503TR |
MOSFET N-CH 30V SOT223
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IRFZ44RSTRR |
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IRF7822TRL |
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IRF7822TRR |
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IRF644NS |
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IRFB13N50A |
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|
IRFP460P |
MOSFET N-CH 500V 20A TO247-3
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IRFB17N50L |
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