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SISC06DN-T1-GE3
manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 30V 27.6A/40A PPAK
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
PowerPAK® 1212-8
Gate Charge (Qg) (Max) @ Vgs:
58 NC @ 10 V
Rds On (Max) @ Id, Vgs:
2.7mOhm @ 15A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
30 V
Vgs (Max):
+20V, -16V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
2455 PF @ 15 V
Mounting Type:
Surface Mount
Series:
TrenchFET® Gen IV
Supplier Device Package:
PowerPAK® 1212-8
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
27.6A (Ta), 40A (Tc)
Power Dissipation (Max):
3.7W (Ta), 46.3W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SISC06
Model Number:
SISC06DN-T1-GE3
Introduction
N-Channel 30 V 27.6A (Ta), 40A (Tc) 3.7W (Ta), 46.3W (Tc) Surface Mount PowerPAK® 1212-8
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IRLL1503TR |
MOSFET N-CH 30V SOT223
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IRFZ44RSTRR |
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IRF7822TRL |
MOSFET N-CH 30V 18A 8SO
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IRF7822TRR |
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IRF644NS |
MOSFET N-CH 250V 14A D2PAK
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|
IRFB13N50A |
MOSFET N-CH 500V 14A TO220AB
|
|
|
|
IRFP460P |
MOSFET N-CH 500V 20A TO247-3
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|
|
|
IRFB17N50L |
MOSFET N-CH 500V 16A TO220AB
|
|
|
|
IRLZ44L |
MOSFET N-CH 60V 50A TO262-3
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IRLZ34L |
MOSFET N-CH 60V 30A TO262-3
|
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