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ISP25DP06LMXTSA1
manufacturer:
Infineon Technologies
Description:
MOSFET P-CH 60V 1.9A SOT223-4
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2V @ 270µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-261-4, TO-261AA
Gate Charge (Qg) (Max) @ Vgs:
13.9 NC @ 10 V
Rds On (Max) @ Id, Vgs:
250mOhm @ 1.9A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
420 PF @ 30 V
Mounting Type:
Surface Mount
Series:
OptiMOS™
Supplier Device Package:
PG-SOT223-4
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
1.9A (Ta)
Power Dissipation (Max):
1.8W (Ta), 5W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
ISP25DP06
Model Number:
ISP25DP06LMXTSA1
Introduction
P-Channel 60 V 1.9A (Ta) 1.8W (Ta), 5W (Tc) Surface Mount PG-SOT223-4
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